Boule/ Ingot Characterization

Boule, crystal or ingot growth is crucial for excellent semiconductor applications, e.g. in light to defects, dislocations and grain boundaries. Beside state of the art processes such as Czochralski method, there are alternative technologies for crystal growth, e.g. from gaseous or liquid phase. To maintain and increase cost-efficiency high frequency eddy current can be applied for boule, crystal or ingot characterization.


  • Resistivity
  • Impedance
  • Homogeneity
  • Defectoscopy
  • Facette formation


  • Non-contact high resolution boule resistivity sensor in reflective configuration
  • Obtaining electrical impedance from different penetration depth
  • Automated high-resolution imaging solution

Further Resources

  • SEMI MF673 — Test Method for Measuring Resistivity of Semiconductor Wafers or Sheet Resistance of Semiconductor Films with a Noncontact Eddy-Current Gauge
  • SEMI M59 — Terminology for Silicon Technology
  • SEMI MF81 — Test Method for Measuring Radial Resistivity Variation on Silicon Wafers
  • SEMI MF84 — Test Method for Measuring Resistivity of Silicon Wafers with an In-Line Four-Point Probe
  • SEMI MF374 — Test Method for Sheet Resistance of Silicon Epitaxial, Diffused, Polysilicon, and Ion-Implanted Layers Using an In-Line Four-Point Probe with the Single-Configuration Procedure
  • SEMI MF1527 — Guide for Application of Certified Reference Materials and Reference Wafers for Calibration and Control of Instruments for Measuring Resistivity of Silicon


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