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The EddyCus® TF map 2530 C2C is a fully automated measurement device for full area characterization of wafer substrates or coatings to ensure process reliability and quality assurance, in the semiconductor industry.
The system is equipped with two non-contact eddy current sensors operating in transmission mode. This allows the homogeneity of the substrate material or conductive coating to be displayed in great detail.
Our system is capable of measuring the sheet resistance or metal film thickness of a thin film as well as the resistivity of the wafer substrate.
During the development of the device, emphasis was placed on reducing contacts of the system with the wafer to a minimum in order not to influence the integrity of the wafer. Therefore, the device works almost completely non-contact. The surface of the wafer substrate or coating is not touched. Contact is only made selectively and with little force on the side surfaces of the wafer. Please have a look at our video of the EddyCus® TF map 2530 C2C to understand the handling process.
The measuring device creates a high-resolution, full-area imaging of the wafer or coating, which gives you a deep insight into the quality of the characterized wafer. Depending on the setting and your time requirements, imagings with a few dozen to several tens of thousands of measurement points are possible.
The software also offers various analysis tools, such as a histogram or various line profiles. To view an area on the wafer in particular detail, you can select the relevant location with the selection tool and analyze it again using line profiles or the histogram.
The EddyCus® TF map 2530 C2C has a loading device that can hold a wafer carrier with 150 mm (6 inch) wafers and 200 mm (8 inch) wafers. The wafer carrier has a capacity of 25 wafers.
The wafer is moved from the cassette/carrier to the eddy current sensor for wafer imaging and returned back to the cassette. Automated wafer handling is a valuable tool for manufacturing companies that need to reduce the amount of time spent handling wafers. Our automated wafer handling system helps reduce labor costs, improve the accuracy of wafer processing and reduce the risk of human error. The system is programmed to accurately measure, handle, and transport wafers from the cassette to the measurement station and back to the cassette. This eliminates the need for manual handling of the wafers, which can lead to errors in measurements and possible damage to the wafers.
A wide band gap material is a type of semiconductor material that has an energy bandgap that is wider than that of a standard semiconductor. The wide band gap materials are used in the semiconductor industry to create transistors and other integrated circuits. These materials are important for semiconductors as they allow for higher power efficiency and faster switching speeds. Wide band gap materials also have higher breakdown voltages, which makes them suitable for high-power applications. They are also more radiation resistant, making them ideal for use in space applications. Examples of wide band gap materials include silicon carbide, gallium nitride, and diamond. These materials are used in a wide range of applications including power supplies, solar cells, and laser diodes.
The EddyCus® TF map 2530 C2C is able to determine the sheet resistance and thickness of a thin film as well as the electrical resistance of a wafer substrate. The device has a large measuring range, which means that almost all conceivable applications can be measured by the device.
For more information please watch our data sheet.
|Measurement technology||Non-contact eddy current sensor, Capacitive or confocal sensor for TTV|
|Substrates||6 / 8 inch wafer|
|Edge effect correction / exclusion||2 – 10 mm (depending on size, range, setup and requirements)|
|Sheet resistance range||
0.0001 – 100 Ohm/sq < 1 – 3 % accuracy
100 – 100,000 Ohm/sq < 1 – 5 % accuracy
(6 decades with one sensor)
|Total thickness measurement||10 – 100,000 μm (optional)|
|Thickness measurement of metal films (e.g. Aluminum, Copper)||2 nm – 2 mm (in accordance with sheet resistance)|
|Measurement patterns (line scan, mapping)||2 nm – 2 mm (in accordance with sheet resistance)|
|Thickness measurement of metal films (e.g. Aluminum, Copper)||
Pitch 1 / 2 / 5 / 10 / 20 / 50 mm
Points 9 / 17 / 49 / 81 / 99 / 169 / 625 / .... / 10,000
|Measurement time||Line scans in less then 1 second Multi point: 0.1 to 1 second per point|
System protected by safety laser scanners
|Device dimensions (w/d/h)||785 mm x 1,170 mm x 666 mm / 30.91“ x 46.06“ x 26.22“|
|Available features||Resistivity, metal thickness, total thickness variation sensor|
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